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| .' . .. . , , I GET-BE-OOO6 1/4 "'-.I . Qualification Test Report (useon Si MMIC UHSO Process) Prepared :June on 26,2003 by: i.( fJi$; YASUSHISATOH Assistant Manager Approved by : J. f~~.().Io-'J"~TOSHIAKI YOKOKA W A Manager Reliability and QC Department NEC Compound Semiconductor Devices,LTD. , I.' , GET-BE-0006 2/4 1. Introduction This report presents UHSO (fT =25GHz) Process Qualification Test result. The Process Qualification Test was performed by UPC8182B(B). 2. Qualification Test items and failure criteria 2. 1 2.2 2. 3 3. Result 3.1 Thermal and Mechanical Environmental Test As shown Table 3.no failure was observed with respect to thermal environmental test and mechanical environmental test. 3.2 High Temperature DC Bias Test High temperature DC bias test at Ta=200t was performed for UPC8182B(B) using 100 samples. The test was performed for 3000 hours. The test results are shown Table 3.No failure has been observed for 3000 hours. LlIcc change is shown in Fig.1. Thermal Environmental Test Mechanical Environmental Test High Temperature DC Bias Test (Table. 1.2) (Table. 1.2) (Table. 1.2) GET-BE-0006 3/4 Table I Test Items Thermal Environmental Test a)Solderability , b)Temperature Cycling c)Thermal Shock d)Moisture Resistance e)Hermetic Seal 2003 1010:Cond.D -65'C 1011:Cond.A O'C +200'C.IOOcycles +100'C.15cycles 8 Test Item and Test Condition Test Condition MIL-STD 883 Method Sample Size 1004:0mit initial conditioning 1071 Fine Leak (Cond.Al) 1 X 10-9 Pa m3/s (-1 X 10-8 atmcdsec) Gross Leak (Cond.C) no stream bubble Mechanical Environmental Test a)Mechanical Shock b)Vibration. Variable Frequency c)Constant Acceleration d)Hermetic Seal 2002: 1.47 x 104rn/s2(1500G).0.5ms.3axis.5times 2007:100 2000Hz. 196rn/S2(20G).3axis. 8 4min.4times 2001: 1.96 x 105rn/s2(20000G).3axis.1min..1time 1071 Fine Leak (Cond.A1) 1 X 10- 9 Pa m3/s (-1 X 10-8 atmcdsec) Gross Leak (Cond.C) no stream bubble Hi erature DC Bias Test 1005:Ta=200'C.Vcc=3V.t=3000Hrs 100 Table 2 Parameters and Criteria Limits Parameters Circuit Current Power Gain Symbols Icc G1 G2 G3 Output Power Pout Test Condition Vcc=3V Vcc=3V.f=0.9GHz Vcc=3V,f=1.9GHz Vcc=3V,f=2.4GHz Vcc=3V,f=2.4GHz Pin=-5dBm Delta Criteria Min 19dB 18dB 18dB 7 dBm Max 38mA 25dB 24dB 24dB - :t 15% - Noise Fi ure NF Vcc=3V.f=2.4GHZ - 6.5dB - ~~_._"_. -~.~ ,..:_~~ ~,~-" ~ . ---~. GET-BE-OOO6 4/4 Table 3 Qualification Test Results Results Test Items " lfailure/sample! \ Reference Thermal Environmental Test Mechanical Environmental Test High Temp. DC Bias Test 1 0/100 0/8 0/8 (at 3000Hrs) - - 15.00% LlIcc * g ; 10.00% 5.00% 0.00% -5.00% ~ 2000 3000 ~ ~MAX -e:- AVE -.- MIN 0 168 336 1000 hours -10.00% -15.00% Fig.1 Icc changeson high temperature DC Bias Test. |
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